PhD in Electronic & Comp Engg - Application-Driven GaN Power Device Characterization and Power Integrated Circuit Development
10:00am - 1:00pm
Room 2306 (Lifts 17-18), 2/F Academic Building, HKUST
活動形式
候選人
TANG, Gaofei
語言
英文
English
新增活動
請各校內團體將活動發布至大學活動日曆。