PhD in Electronic & Comp Engg - Application-Driven GaN Power Device Characterization and Power Integrated Circuit Development
10:00am - 1:00pm
Room 2306 (Lifts 17-18), 2/F Academic Building, HKUST
活动形式
候选人
TANG, Gaofei
语言
英文
English
新增活动
请各校内团体将活动发布至大学活动日历。