PHD in Electronic & Comp Engg - p-GaN Gate High-Electron-Mobility Transistors on Silicon Substrate for Radio-Frequency Power Amplification

Name: PHD in Electronic & Comp Engg - p-GaN Gate High-Electron-Mobility Transistors on Silicon Substrate for Radio-Frequency Power Amplification
Start: 2025-06-09
End: 2025-06-09

2025 年 6 月 9 日

2:00pm - 5:00pm

Room 2408 (Lifts 17-18), 2/F Academic Building, HKUST

Supporting the below United Nations Sustainable Development Goals:支持以下聯合國可持續發展目標：支持以下联合国可持续发展目标：

活動形式

論文答辯

候選人

CHENG, Yan

語言

英文