ECE Seminar - IEEE Magnetics and Electron Devices Society Distinguished Lecture - Nanoscale magnetism: From new materials to unconventional computing architectures

Abstract: The emergence of magnetic random-access memory (MRAM) based on nanoscale magnetic tunnel junctions (MTJs) provides an unprecedented opportunity to develop unconventional computing architectures, with potential impact far beyond replacing existing semiconductor-based memory solutions. This talk will consist of two parts: First, we review the current state of development of ferromagnet-based MRAM, which uses current-induced spin-transfer torque (STT) to switch the magnetic state of nanoscale MTJs. We then discuss how emerging device concepts based on new physics and new materials may enable significant advances beyond today’s STT-MRAM. As an example of new physics, we discuss electric-field-controlled MTJs that utilize the voltage-controlled magnetic anisotropy (VCMA) effect for switching, and present recent results on the first VCMA-MTJ devices with sub-1V write voltage. Second, we will discuss how appropriately designed MTJs can be used to fulfill unconventional roles within a computing system, notably as electrically controlled stochastic bitstream generators. We then discuss the application of such devices to artificial neural networks, solvers for difficult computational problems such as combinatorial optimization, as well as physically unclonable functions.