Name: PhD in Electronic & Comp Engg - Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization
Start: 2018-08-09
End: 2018-08-09

PhD in Electronic & Comp Engg - Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization

2018 年 8 月 9 日

10:00am - 1:00pm

Room 2304 (Lifts 17-18), 2/F Academic Building, HKUST

活动形式

论文答辩

候选人

ZHANG, Zhaofu

语言

英文

English

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