BEGIN:VCALENDAR
PRODID:-//HKUST Drupal Platform//EN
VERSION:2.0
BEGIN:VTIMEZONE
TZID:Asia/Hong_Kong
BEGIN:STANDARD
DTSTART:20071104T020000
TZOFFSETFROM:+0700
TZOFFSETTO:+0800
TZNAME:HKT
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BEGIN:VEVENT
DTSTAMP;TZID=Asia/Hong_Kong:20260611T221423
DTSTART;TZID=Asia/Hong_Kong:20180809T100000
DTEND;TZID=Asia/Hong_Kong:20180809T130000
LOCATION:Room 2304 (Lifts 17-18), 2/F Academic Building, HKUST
SUMMARY:PhD in Electronic & Comp Engg - Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization
UID:24230
END:VEVENT
END:VCALENDAR