SiC Power Semiconductor: Crystal Growth Technology and Materials Science

4:30pm - 5:30pm
Rm4475, Lift 25/26

The development of silicon carbide (SiC) crystal growth technology over the last few decades has brought about tremendous progress in SiC power devices. 150 mm diameter SiC substrates with a low dislocation density are currently commercially available, and 4H-SiC substrates in 200 mm diameter are almost ready for the market. This seminar is aimed at explaining the recent development of the technology, particularly focusing on the diameter enlargement and quality improvement of SiC crystals. The seminar also tries to discuss the fundamental materials science behind the SiC crystal growth. A better understanding of the SiC crystal growth processes is indispensable for implementing high performance and reliable SiC power devices with reasonable costs.

講者/ 表演者:
Prof. Noboru Ohtani
School of Engineering, Kwansei Gakuin University, Hyogo, Japan

Noboru Ohtani is Professor of School of Engineering at Kwansei Gakuin University, Hyogo, Japan. He earned his Ph.D. degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he was with the Advanced Technology Research Laboratories, Nippon Steel Corporation from 1984 to 2008 after graduating from Tokyo Institute of Technology, Japan, where he obtained MSc degree in Physics in 1984. At Nippon Steel Corporation, he was responsible for leading several research projects on semiconductor materials and devices, particularly focusing on silicon carbide (SiC) semiconductor materials. For over 30 years, he has pioneered and made seminal contributions to the development and manufacturing of large high-quality SiC single crystals and substrates. Because of these outstanding achievements, he received the Japan Institute of Metals (JIM) Technical Development Award in 1997 and Nikkei BP Technology Award in 2008 for his prominent contribution to the development of bulk crystal growth technology of SiC single crystals. He also received a Fellow award from the Japan Society of Applied Physics (JSAP) for his seminal research contributions to SiC bulk crystal growth and defect physics in 2021.


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