Name: PhD in Electronic & Comp Engg - Multifunctional GaN-on-Si Power Devices based on Double-Channel Heterostructure
Start: 2019-08-06
End: 2019-08-06

PhD in Electronic & Comp Engg - Multifunctional GaN-on-Si Power Devices based on Double-Channel Heterostructure

2019 年 8 月 6 日

1:30pm - 4:30pm

Room 2504 (Lifts 25-26), 2/F Academic Building, HKUST

活動形式

論文答辯

候選人

LEI, Jiacheng

語言

英文

English