PHD in Electronic & Comp Engg - Surface and Gate-Stack Trap States in GaN Lateral Power HEMT Devices: Physical Understandings and Reliability Enhancement

9:00am - 12:00pm
Scheduled Zoom Meeting: https://hkust.zoom.us/j/94907583747?pwd=NE9HNmxid1laQjY1NkVlNy81T1Y1dz09 (Meeting ID: 949 0758 3747, Passcode: 878145), HKUST
Event Format
Thesis Defense
Candidate
YANG, Song
Language
English
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