PHD in Electronic & Comp Engg - Surface and Gate-Stack Trap States in GaN Lateral Power HEMT Devices: Physical Understandings and Reliability Enhancement

Name: PHD in Electronic & Comp Engg - Surface and Gate-Stack Trap States in GaN Lateral Power HEMT Devices: Physical Understandings and Reliability Enhancement
Start: 2020-12-18
End: 2020-12-18

18 December 2020

9:00am - 12:00pm

Scheduled Zoom Meeting: https://hkust.zoom.us/j/94907583747?pwd=NE9HNmxid1laQjY1NkVlNy81T1Y1dz09 (Meeting ID: 949 0758 3747, Passcode: 878145), HKUST

Event Format

Thesis Defense

Candidate

YANG, Song

Language

English