PHD in Electronic & Comp Engg - Device Structures and Materials for the Stable and Reliable Gate Operation of Schottky-Type p-GaN Gate HEMTs

2:30pm - 5:30pm
Room 4472 (Lifts 25-26), 4/F Academic Building, HKUST
Event Format
Thesis Defense
Candidate
CHEN, Junting
Language
English
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