Joint Distinguished Seminar by EDSSC and HKUST - Differentiated Silicon Technologies to enable next gen 5G and 6G radio
The emergence of enhanced mobile broadband (eMBB) connectivity based on mmwave 5G generated huge interest in the entire telecommunication ecosystem. While mmwave allows huge bandwidth of channels to enable enhanced broadband, it also poses a lot of technical challenges in terms of coverage, generating enough transmitted power efficiently particularly in the uplink, system cost & scaling and long term reliability of the hardware system. In future, carrier frequencies will go even higher to > 100GHz particularly D-band (120-160GHz) for both communication and sensing. Current talk will focus on how Silicon technologies based on differentiated partially and fully depleted SOI (PDSOI & FDSOI) and SiGe technologies can address the above challenges by enabling a highly efficient and integrated radio without compromising on the mmwave performance and reliability. Talk will highlight the technology Figures of Merits (FOMs) for a mmwave phased array system and how differentiated PDSOI, FDSOI & SiGe technology platforms compares with other silicon technologies in terms of devices and circuits performance.
Dr. Anirban Bandyopadhyay is the Senior Director and head of Strategic Applications within the Mobility & Wireless Infrastructure Business Unit of GLOBALFOUNDRIES, USA. His work is currently focused on hardware architecture & technology evaluations for emerging RF and mmwave applications. Prior to joining GLOBALFOUNDRIES, he was with IBM Microelectronics and with Intel where he worked on different areas like RF Design Enablement, Silicon Photonics, signal integrity in RF & Mixed signal SOC’s. Dr. Bandyopadhyay represents Globalfoundries in different industry consortia and alliances on RF/mmwave applications and is an IEEE Fellow and a Distinguished Lecturer of IEEE Electron Devices Society.