ECE Seminar - Recent Progress in Ultrawide-Bandgap Gallium Oxide Power Transistors
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Abstract: This report introduces research progress in ultra-wide bandgap Gallium Oxide vertical power devices. To address the challenge of P-type doping, a deep-level compensation strategy was employed to create high-resistance current blocking layers, enabling the development of high-performance vertical trench-gate MOSFETs. Through innovations in N-ion implantation and self-aligned etching, we achieved kilovolt-class breakdown voltages and nanosecond-level switching speeds.
Dr. Xuanze Zhou received his Ph.D. from the University of Science and Technology of China (USTC) in 2023 and subsequently served as a postdoctoral researcher at USTC. He is currently a specially appointed associate researcher at USTC, focusing on gallium oxide semiconductor materials and power devices. His work primarily involves MOCVD epitaxy of gallium oxide, transistor structure design, and process research. He has published over 30 papers in top-tier journals and conferences, including IEEE EDL, IEEE TED, APL, and ISPSD. His research has been featured in special reports by ScienceNet, People’s Daily Online, China Education Network, Science and Technology Daily, and the international journal Compound Semiconductor. His research achievements were selected as one of the top ten advancements in China’s third-generation semiconductors in 2024.