PHD in Electronic & Comp Engg - A Novel LaAlO3 Gate Dielectric for High-Performance SiC Power MOSFETs
2:00pm - 5:00pm
Room 4472 (Lifts 25-26), 4/F Academic Building, HKUST
活动形式
论文答辩
候选人
HUANG, Linhua
语言
英文