Name: PhD in Electronic & Comp Engg - Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET
Start: 2017-08-17
End: 2017-08-17

PhD in Electronic & Comp Engg - Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET

2017 年 8 月 17 日

10:00am - 1:00pm

Room 2611 (Lifts 31-32), 2/F Academic Building, HKUST

活动形式

论文答辩

候选人

HUA, Mengyuan

语言

英文

English