PHD in Electronic & Comp Engg - Device Structures and Materials for the Stable and Reliable Gate Operation of Schottky-Type p-GaN Gate HEMTs

Name: PHD in Electronic & Comp Engg - Device Structures and Materials for the Stable and Reliable Gate Operation of Schottky-Type p-GaN Gate HEMTs
Start: 2025-04-10
End: 2025-04-10

2025 年 4 月 10 日

2:30pm - 5:30pm

, HKUST

Supporting the below United Nations Sustainable Development Goals:支持以下聯合國可持續發展目標：支持以下联合国可持续发展目标：

活动形式

论文答辩

候选人

CHEN, Junting

语言

英文