PHD in Electronic & Comp Engg - Channel and Buffer Engineering for Improving High-frequency Device Performance of GaN HEMTs on Silicon Substrate

10:00am - 1:00pm
Room 2463 (Lifts 25-26), 2/F Academic Building, HKUST
活动形式
论文答辩
候选人
SONG, Wenjie
语言
英文