MVSG-based Compact Models for GaN Devices
Given its high mobility, high breakdown voltage and decent thermal conductivity, GaN technologies have shown great promise for high-power high-frequency (HP-HF), rapidly rising as a front runner for mm-wave to THz analog/RF circuits for IoT and 5G/6G wireless communication. Meanwhile, it is also heavily explored for power electronic applications for fast charging, data center, and electric vehicles. As GaN technology continues to improve, challenges of high design cost and sub-optimal system performance emerge as bottlenecks preventing the technology from wide scale deployment. Accurate, scalable and efficient compact model is key to overcome such challenges.
This presentation will provide a brief overview of the family of MVSG GaN compact model, including models for GaN HEMT, GaN multi-channel diodes and GaN transmission-line resistors. The model formulation and various features will be introduced. Application examples will also be demonstrated, showing the potentials of this group of physics-based compact models.
Prof. Lan Wei received her B.S. in Microelectronics from Peking University, China (2001), M.S and Ph. D. in Electrical Engineering from Stanford University, USA (2007 and 2010, respectively). She is currently an Associate Professor at the University of Waterloo, Canada. She has intensive experience in device physics-based compact modeling including silicon and GaN technologies, device-circuit interactive design and optimization, integrated nanoelectronic systems with low-dimensional materials, cryogenic CMOS device modeling and circuit design for quantum computing. She has authored/co-authored more than 90 peered reviewed publications and served on the technical program committees including IEDM, ICCAD, DATE, ISQED, BCICTS, etc.