Name: PhD in Electronic & Comp Engg - Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization
Start: 2018-08-09
End: 2018-08-09

PhD in Electronic & Comp Engg - Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization

9 August 2018

10:00am - 1:00pm

Room 2304 (Lifts 17-18), 2/F Academic Building, HKUST

Supporting the below United Nations Sustainable Development Goals:支持以下聯合國可持續發展目標：支持以下联合国可持续发展目标：

Event Format

Thesis Defense

Candidate

ZHANG, Zhaofu

Language

English