Name: PhD in Electronic & Comp Engg - Multifunctional GaN-on-Si Power Devices based on Double-Channel Heterostructure
Start: 2019-08-06
End: 2019-08-06

PhD in Electronic & Comp Engg - Multifunctional GaN-on-Si Power Devices based on Double-Channel Heterostructure

6 August 2019

1:30pm - 4:30pm

Room 2504 (Lifts 25-26), 2/F Academic Building, HKUST

Event Format

Thesis Defense

Candidate

LEI, Jiacheng

Language

English