Name: PhD in Electronic & Comp Engg - Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET
Start: 2017-08-17
End: 2017-08-17

PhD in Electronic & Comp Engg - Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET

17 August 2017

10:00am - 1:00pm

Room 2611 (Lifts 31-32), 2/F Academic Building, HKUST

Event Format

Thesis Defense

Candidate

HUA, Mengyuan

Language

English