Name: PhD in Electronic & Comp Engg - Application-Driven GaN Power Device Characterization and Power Integrated Circuit Development
Start: 2018-08-13
End: 2018-08-13

PhD in Electronic & Comp Engg - Application-Driven GaN Power Device Characterization and Power Integrated Circuit Development

13 August 2018

10:00am - 1:00pm

Room 2306 (Lifts 17-18), 2/F Academic Building, HKUST

Event Format

Thesis Defense

Candidate

TANG, Gaofei

Language

English