Physics Department - High Density Information Storage using Vacancies in Wide-band Semiconductors

In the era of digital information, realizing efficient and durable data storage solutions is paramount. Innovations in storage capacity, data throughput, device lifespan and energy consumption are pressing necessities for the continuous progression of practical digital data storage technologies. In this talk, I will present burn after read method based on the trapping states of Ce:YAG[1]. A rewritable multiplexing optical information storage and encryption method will be introduced. I will also talk about a diamond storage technique that exploits fluorescent vacancy centres as robust storage units and provides a high storage density of 14.8 Tbit cm−3, a short write time of 200 fs and an estimated ultralong maintenance-free lifespan on the scale of millions of years[2]. High-speed readout through plane and volume imaging is demonstrated with a high fidelity exceeding 99%, showing that the approach addresses the practical demands of digital data storage and provides a promising solution for future storage requirements.

References:
[1] Laser & Photon. Rev. 18. 2301024 (2024)
[2] Nature Photonics 18, 1327-1334 (2024)