BEGIN:VCALENDAR
PRODID:-//HKUST Drupal Platform//EN
VERSION:2.0
BEGIN:VTIMEZONE
TZID:Asia/Hong_Kong
BEGIN:STANDARD
DTSTART:20071104T020000
TZOFFSETFROM:+0700
TZOFFSETTO:+0800
TZNAME:HKT
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP;TZID=Asia/Hong_Kong:20260423T140517
DTSTART;TZID=Asia/Hong_Kong:20170817T100000
DTEND;TZID=Asia/Hong_Kong:20170817T130000
LOCATION:Room 2611 (Lifts 31-32), 2/F Academic Building, HKUST
SUMMARY:PhD in Electronic & Comp Engg - Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET
UID:25574
END:VEVENT
END:VCALENDAR